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Comparison of time-related electrical properties of PN junctions and Schottky diodes for ZnO-based betavoltaic batteries

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ARTICLE DOWNLOAD

Comparison of time-related electrical properties of PN junctions and Schottky diodes for ZnO-based betavoltaic batteries

10$

Xiao-Yi Li, Jing-Bin Lu, Ren-Zhou Zheng, Yu Wang, Xu Xu, Yu-Min Liu & Rui He 

Abstract

Schottky diodes and PN junctions were utilized as energy converting structures in ZnO-based betavoltaic batteries, in which 0.101121 Ci 63Ni was selected as the beta source. The time-related electrical properties were obtained using Monte Carlo simulations. For the n-type ZnO, the Pt/ZnO Schottky diode had the highest energy conversion efficiency, and the Ni/ZnO Schottky diode had the largest Isc. The overall electrical performance of PN junctions is better than that of Schottky diodes. The lifetimes of Pt/ZnO and Ni/ZnO are longer than for other Schottky devices, coming close to those of PN junctions. Considering that Schottky diodes are easier to fabricate and independent of p-type semiconductors, Pt/ZnO and Ni/ZnO diodes offer alternatives to PN-junction-based betavoltaic batteries.

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Year 2020
Language English
Format PDF
DOI 10.1007/s41365-020-0723-y